A. Low voltage kuputira zvinhu
1.1 Fomura
Epoxy nebwe E-44 100
Diluent Dibromophenyl glycidyl ether 20
Murazvo unodzora antimony trioxide 10
Inoshanda silica powder 400 mesh 200
Kurapa mumiriri 593 25
Diethylenetriamine 3
1.2 Kugadzira maitiro
1.2.1 Yakaomeswa nesilicon poda kune iyo mwando zvemukati pazasi 0.2%
1.2.2 Wedzera epoxy nebwe, mutete, murazvo retardant, uye nesilicon upfu kune reactor mune inotevera hurongwa
1.2.3 Simudza tembiricha kusvika 100 ℃, degas musanganiswa pasi -0.1Mpa vacuum ye 30min kuenzana.
1.2.4 Kutonhora kusvika pazasi 50 ° C, wedzera kurapa mumiririri, chengetedza tembiricha isapfuure 50 ° C, degas vacuum degree -0.1Mpa, kusanganisa nguva isingapfuuri 30min, wobva wapinda mukukanda.
B. Yakakwira voltage uye yakaderera magetsi kuputira zvinhu
2.1 Kuumbwa
Epoxy nebwe E-44 100
Diluent Dibromophenyl glycidyl ether 20
Murazvo unodzora antimony trioxide 10
Inoshanda silica powder 400 mesh 300
Kurapa mumiriri S101 95
Yekumhanyisa DMP-30 1.5
2.2 Kugadzira maitiro
2.2.1 Yakaomeswa yesilicon poda kune iyo mwando iri pazasi pe0.2%
2.2.2 Gadzira zviviri-chinhu mune inotevera hurongwa
Chinhu chinoumba epoxy nebwe, accelerator, murazvo retardant, nesilicon upfu 200
B chinhu chinorapa mumiririri, mutete, silicon upfu 100
2.2.3 Chinhu cheA chinodziirwa kusvika ku80-100 ℃, uye musanganiswa wacho wakadzvanywa pasi -0.1Mpa vhoriyamu ye30min kuenzana.
2.2.4 Iyo tembiricha yechinhu B inokwidzwa kusvika ku50 ℃, uye musanganiswa unodhonzwa pasi -0.1Mpa vharuvhu ye30min kuenzana.
2.2.5 Kutonhora kusvika pazasi 50 ℃, wedzera chinhu A kuchikamu B, chengetedza tembiricha isapfuure 50 ℃, degas vacuum degree -0.1Mpa, uchivhenganisa nguva 30min, unogona kupinda uchidira.
